型号:

DI9956T

RoHS:
制造商:Diodes Inc描述:MOSFET 2N-CH 30V 3.7A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 阵列
其它图纸 SO-8 Package Top
SO-8 Package Side 1
SO-8 Package Side 2
标准包装 1
系列 -
FET 型 2 个 N 沟道(双)
FET 特点 标准
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 3.7A
开态Rds(最大)@ Id, Vgs @ 25° C -
Id 时的 Vgs(th)(最大) -
闸电荷(Qg) @ Vgs -
输入电容 (Ciss) @ Vds -
功率 - 最大 2W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOP
包装 剪切带 (CT)
产品目录页面 1577 (CN2011-ZH PDF)
其它名称 DI9956
DI9956CT
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